IEC 63275-2 Ed. 1.0 b:2022
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- IEC
This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Product Details
- Edition:
- 1.0
- Published:
- 05/01/2022
- ISBN(s):
- 9782832201213
- Number of Pages:
- 24
- File Size:
- 1 file , 900 KB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
